HEMT

HEMT or High Electron Mobility Transistor is a type of field effect transistor i.e. transistors that use electric field to control current flow. It uses junction of two materials with different band gaps as channel. Recently, Indian scientists developed India’s first indigenous HEMTs from gallium nitride. These offer advantage over silicon based transistors as they occupy lesser space and can operate at high voltages. This device could find use in electric vehicles, locomotives, power transmission, etc.